✦ LIBER ✦

High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure

✍ Scribed by D. A. Vinokurov; A. L. Stankevich; V. V. Shamakhov; V. A. Kapitonov; A. Yu. Leshko; A. V. Lyutetskiĭ; D. N. Nikolaev; N. A. Pikhtin; N. A. Rudova; Z. N. Sokolova; S. O. Slipchenko; M. A. Khomylev; I. S. Tarasov

Book ID: 111443555
Publisher: Springer
Year: 2006
Tongue: English
Weight: 217 KB
Volume: 40
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782606060224

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-power laser diodes (λ = 808–850 nm)

High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

✍ A. Yu. Andreev; A. Yu. Leshko; A. V. Lyutetskiĭ; A. A. Marmalyuk; T. A. Nalyot; 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 222 KB

High-power lasers (γ = 808 nm) based on

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

✍ A. Yu. Andreev; S. A. Zorina; A. Yu. Leshko; A. V. Lyutetskiy; A. A. Marmalyuk; 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 202 KB

High-power laser diodes based on asymmet

High-power laser diodes based on asymmetric separate-confinement heterostructures

✍ D. A. Vinokurov; S. A. Zorina; V. A. Kapitonov; A. V. Murashova; D. N. Nikolaev; 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 112 KB

High-power diode lasers (λ = 1.7–1.8 µm)

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

✍ A. V. Lyutetskiy; N. A. Pikhtin; N. V. Fetisova; A. Yu. Leshko; S. O. Slipchenko 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 148 KB