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High-power laser structures grown on bulk GaN crystals

✍ Scribed by Pawel Prystawko; Robert Czernetzki; Lucy Gorczyca; Grzegorz Targowski; Przemek Wisniewski; Piotr Perlin; Marcin Zielinski; Tadeusz Suski; Mike Leszczynski; Izabella Grzegory; Sylwester Porowski

Book ID
108165940
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
189 KB
Volume
272
Category
Article
ISSN
0022-0248

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## Abstract In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on high‐pressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of