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High-power highly reliable Al-free 940-nm diode lasers

✍ Scribed by Erbert, G.; Beister, G.; Hulsewede, R.; Knauer, A.; Pittroff, W.; Sebastian, J.; Wenzel, H.; Weyers, M.; Trankle, G.

Book ID
117866573
Publisher
IEEE
Year
2001
Tongue
English
Weight
114 KB
Volume
7
Category
Article
ISSN
1077-260X

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High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion e ciency of 60% at an output power of 72 W have been d