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High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers

✍ Scribed by Lee, Sung-Nam; Cho, S. Y.; Ryu, H. Y.; Son, J. K.; Paek, H. S.; Sakong, T.; Jang, T.; Choi, K. K.; Ha, K. H.; Yang, M. H.; Nam, O. H.; Park, Y.; Yoon, E.


Book ID
120205060
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
483 KB
Volume
88
Category
Article
ISSN
0003-6951

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High power violet laser diodes with crac
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## Abstract Nitride based violet laser diodes grown on GaN substrates have been investigated. A grooved substrate, having a striped pattern with a pitch of 400 μm, has been prepared and epitaxial growth has been performed. No cracks have been observed in the epi‐layers. The violet laser device has