High power violet laser diodes with crack-free layers on GaN substrates

✍ Scribed by Ito, Shigetoshi ;Kamikawa, Takeshi ;Ueta, Yoshihiro ;Takatani, Kunihiro ;Yamasaki, Yukio ;Yuasa, Takayuki ;Taneya, Mototaka

• Book ID: 105364241
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 156 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674755

✦ Synopsis

Abstract

Nitride based violet laser diodes grown on GaN substrates have been investigated. A grooved substrate, having a striped pattern with a pitch of 400 μm, has been prepared and epitaxial growth has been performed. No cracks have been observed in the epi‐layers. The violet laser device has been fabricated and characterised. At a pulsed output power of 210 mW, the operating current and the voltage have been 164 mA and 6.6 V, respectively. The mean‐time‐to‐failure has been estimated to be over 3000 h under pulsed condition with an output power of 210 mW at 80 °C. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)