✦ LIBER ✦

High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD

✍ Scribed by Jun Zhao; Li, L.; Wumin Wang; Yicheng Lu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-power 980-nm AlGaAs/InGaAs strained

✍ Chen, Y.K.; Wu, M.C.; Hobson, W.S.; Pearton, S.J.; Sergent, A.M.; Chin, M.A. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 319 KB

Diode lasers emitting at 1190 nm with a

✍ D. A. Vinokurov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevich; V. V. Shamakho 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 144 KB

Diode lasers emitting at 1220 nm with a

✍ D. A. Vinokurov; V. A. Kapitonov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevic 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 171 KB

High-performance 980-nm quantum-well las

✍ Yang, G.W.; Hwu, R.J.; Xu, Z.T.; Ma, X.Y. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 269 KB