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High Power Amplifier Based on a Transformer-Type Power Combiner in CMOS Technology

✍ Scribed by Javidan, J.; Atarodi, M.; Luong, H.C.


Book ID
115497235
Publisher
Institute of Electrical and Electronics Engineers
Year
2010
Tongue
English
Weight
645 KB
Volume
57
Category
Article
ISSN
1549-7747

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A 2.6-GHz fully integrated CMOS power am
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## Abstract A 2.6‐GHz power amplifier was implemented with a 0.18 ΞΌm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on‐chip transformer, which was designed to