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High-Power AlGaInN Lasers

✍ Scribed by Takeya, M. ;Tojyo, T. ;Asano, T. ;Ikeda, S. ;Mizuno, T. ;Matsumoto, O. ;Goto, S. ;Yabuki, Y. ;Uchida, S. ;Ikeda, M.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
380 KB
Volume
192
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis


We have successfully fabricated high-power AlGaInN laser diodes with long lifetime, high kink level, wide beam divergence angle parallel to the junction plane (q || ), and low relative intensity noise (RIN). We have also adopted a 3 00 f sapphire substrate to improve productivity and have achieved uniform fabrication using a carefully designed quartz reactor and heating system. The introduction of a new laser structure successfully provided a dramatic improvement in device properties. In particular, the characteristic temperature (T 0 ) was improved to 235 K, which is the highest ever reported. In addition, we fabricated a super high power (SHP) AlGaInN blue-violet laser diode array, achieving a maximum light output power of 4.2 W under cw-operation at 25 C with a lifetime under 1 W cw-operation at 25 C of more than 1000 h.


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