High-performance solution-processed polymer space-charge-limited transistor

✍ Scribed by Yu-Chiang Chao; Hsin-Fei Meng; Sheng-Fu Horng; Chain-Shu Hsu

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 852 KB
• Volume: 9
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2007.11.012

✦ Synopsis

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10 4 . The current density is higher than 1 mA/cm 2 .