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High-Performance Solution-Deposited n-Channel Organic Transistors and their Complementary Circuits

✍ Scribed by B. Yoo; B. A. Jones; D. Basu; D. Fine; T. Jung; S. Mohapatra; A. Facchetti; K. Dimmler; M. R. Wasielewski; T. J. Marks; A. Dodabalapur


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
352 KB
Volume
19
Category
Article
ISSN
0935-9648

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## Abstract A solution processed n‐channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zi