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Solution-deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices

✍ Scribed by Bhola Nath Pal; Phylicia Trottman; Jia Sun; Howard E. Katz


Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
21 KB
Volume
18
Category
Article
ISSN
1616-301X

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Solution-Deposited Zinc Oxide and Zinc O
✍ Bhola Nath Pal; Phylicia Trottman; Jia Sun; Howard E. Katz πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 413 KB

## Abstract A solution processed n‐channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zi