High-performance single-turn interlaced-stacked transformers for Ka-band CMOS RFIC applications

✍ Scribed by Yo-Sheng Lin; Chi-Chen Chen; Hsiao-Bin Liang; Po-Feng Yeh; Tao Wang; Shey-Shi Lu

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 634 KB
• Volume: 49
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.22301

✦ Synopsis

Abstract

In this article, we demonstrate that high‐coupling and ultra‐low‐loss transformers for Ka‐Band (26–40 GHz) CMOS RFIC applications can be achieved by using single‐turn interlaced‐stacked (STIS) structure implemented in a standard 0.18‐μm CMOS technology. State‐of‐the‐art G~A__max__~ of 0.777, 0.852, and 0.799 (i.e., NF~min~ of 1.097, 0.695, and 0.977 dB) were achieved at 30, 36, and 40 GHz, respectively, for a 2‐layer STIS transformer with an inner dimension of 100 × 100 μm^2^ and a metal width of 10 μm, mainly due to the high magnetic‐coupling factor and the high resistive‐coupling factor. Furthermore, the reasons why the STIS transformer exhibits better performances than the traditional bifilar and the traditional stacked transformer are explained. These results show that the STIS transformers are very promising for high‐performance Ka‐Band CMOS RFIC applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 936–942, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22301