Figure 1 . (a) XRD data of the as-prepared BaTi 0.95 Co 0.05 O 3 fi lm. (b) A schematic drawing of the measurement confi guration. (c) Crosssection SEM image of a memory cell.
High-Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films
β Scribed by Seungchel Choi; Sang-Hyun Hong; Shin Hyo Cho; Samdae Park; Su-Moon Park; Ohyun Kim; Moonhor Ree
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 165 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0935-9648
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