High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

✍ Scribed by Zhibo Yan; Yanyan Guo; Guoquan Zhang; J.-M. Liu

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 627 KB
• Volume: 23
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.201004306

✦ Synopsis

Figure 1 . (a) XRD data of the as-prepared BaTi 0.95 Co 0.05 O 3 fi lm. (b) A schematic drawing of the measurement confi guration. (c) Crosssection SEM image of a memory cell.