High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

✍ Scribed by Shinobu Takehiro; Masao Sakuraba; Junichi Murota; Toshiaki Tsuchiya

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 903 KB
• Volume: 165
• Category: Article
• ISSN: 0424-7760
• DOI: 10.1002/eej.20597