✦ LIBER ✦

High-Performance GaN-Based Vertical-Injection Light-Emitting Diodes With TiO2–SiO 2 Omnidirectional Reflector and n-GaN Roughness

✍ Scribed by Huang, H.W.; Kuo, H.C.; Lai, C.F.; Lee, C.E.; Chiu, C.W.; Lu, T.C.; Wang, S.C.; Lin, C.H.; Leung, K.M.

Book ID: 119803514
Publisher: IEEE
Year: 2007
Tongue: English
Weight: 316 KB
Volume: 19
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2007.893829

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fabrication and characteristics of thin-

Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO 2 /SiO 2 omnidirectional reflectors

✍ Chiu, C H; Kuo, H C; Lee, C E; Lin, C H; Cheng, P C; Huang, H W; Lu, T C; Wang, 📂 Article 📅 2007 🏛 Institute of Physics 🌐 English ⚖ 715 KB

Improved performance of InGaN/GaN blue l

Improved performance of InGaN/GaN blue light-emitting diodes with a SiO2/TiO2 Bragg reflector

✍ Chen, Lung-Chien ;Feng, Hui-Ching 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 140 KB

## Abstract InGaN/GaN blue light‐emitting diodes (LEDs) on sapphire substrates with a SiO~2~/TiO~2~ Bragg reflector were fabricated. The deposited SiO~2~/TiO~2~ Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO~2~/TiO~2~ Bragg ref

Enhancement of InGaN–GaN Indium&#8

Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO$_2$–SiO$_2$Multilayer Stack Omnidirectional Reflector

✍ Lin, C.H.; Lai, C.F.; Ko, T.S.; Huang, H.W.; Kuo, H.C.; Hung, Y.Y.; Leung, K.M.; 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 466 KB