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High performance CPW and microstrip ring resonators on silicon substrates

✍ Scribed by C. C. Chen; B. F. Hung; Albert Chin; S. P. McAlister

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
151 KB
Volume
42
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

High performance CPW and novel microstrip ring resonators at ∼30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton‐implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electro‐magnetic simulations, were measured. In contrast, the ring resonators on VLSI‐standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 511–514, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20353

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