Performance of integrated antennas on silicon substrates of high and low resistivities up to 110 GHz for wireless interconnects
✍ Scribed by Y. P. Zhang; M. Sun; W. Fan
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 127 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Monopoles of 1‐mm axial length are designed and fabricated on silicon substrates of high‐resistivity 5 kΩ‐cm and low‐resistivity 10 Ω‐cm, respectively. We measure their performance up to 110 GHz for wireless interconnects for the first time. The reflection measurements show that a sharp resonance can be seen at 75 GHz for the meander monopole and monopole pairs at 67 and 104 GHz for the zigzag 30° monopole on the silicon substrate of high resistivity, but no such sharp resonance can be seen for those on the silicon substrate of low resistivity. Transmission measurements show that a high‐gain window exists. The existence of the high‐gain window is the most important finding of this work and is useful in the design of chip‐scale radios or wireless chip area networks. This suggests that the operating frequency of wireless interconnects be allocated within the high‐gain window for good performance. Furthermore, metal lines running parallel with or vertical to the monopole pairs are observed to improve the highest gain of this window area. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 302–305, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21332