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High-Performance Bi 2 Te 3 -Based Topological Insulator Film Magnetic Field Detector

โœ Scribed by Zhang, H. B.; Li, H.; Shao, J. M.; Li, S. W.; Bao, D. H.; Yang, G. W.

Book ID
125517429
Publisher
American Chemical Society
Year
2013
Tongue
English
Weight
319 KB
Volume
5
Category
Article
ISSN
1944-8244

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๐Ÿ“œ SIMILAR VOLUMES

MBE growth optimization of topological i
MBE growth optimization of topological insulator Bi2Te3 films
โœ J. Krumrain; G. Mussler; S. Borisova; T. Stoica; L. Plucinski; C.M. Schneider; D ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 716 KB

We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied u