High-mobility thin-film transistor with amorphous InGaZnO[sub 4] channel fabricated by room temperature rf-magnetron sputtering

✍ Scribed by Yabuta, Hisato; Sano, Masafumi; Abe, Katsumi; Aiba, Toshiaki; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

• Book ID: 120502536
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 449 KB
• Volume: 89
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2353811