𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

✍ Scribed by Xiu, F. X.; Yang, Z.; Mandalapu, L. J.; Zhao, D. T.; Liu, J. L.; Beyermann, W. P.

Book ID
115526095
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
317 KB
Volume
87
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Li-doped p-type ZnS grown by molecular b
Li-doped p-type ZnS grown by molecular beam epitaxy
✍ K. Ichino; Y. Matsuki; S. T. Lee; T. Nishikawa; M. Kitagawa; H. Kobayashi πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 103 KB
P-type ZnO thin films prepared by plasma
P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO
✍ Liang, H. W. ;Lu, Y. M. ;Shen, D. Z. ;Liu, Y. C. ;Yan, J. F. ;Shan, C. X. ;Li, B πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 123 KB

## Abstract N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on __c__‐plane sapphire (Al~2~O~3~) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (__N__~A~ – __N__~D~) of 1.2 Γ— 10^18^ cm^–3^ a