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High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

✍ Scribed by Wu, Wei; De, Debtanu; Chang, Su-Chi; Wang, Yanan; Peng, Haibing; Bao, Jiming; Pei, Shin-Shem

Book ID: 120165247
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 774 KB
Volume: 102
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4801861

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