We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 mm thick silicon bulk, contacted on th
โฆ LIBER โฆ
High-gain phototransistors on high-resistivity silicon substrate
โ Scribed by G. Batignani; M.G. Bisogni; M. Boscardin; L. Bosisio; G.F. Dalla Betta; A. Del Guerra; S. Dittongo; F. Forti; M. Giorgi; D.J. Han; S. Linsalata; G. Marchiori; C. Piemonte; I. Rachevskaia; S. Ronchin
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 162 KB
- Volume
- 518
- Category
- Article
- ISSN
- 0168-9002
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