✦ LIBER ✦

High-gain high-isolation CMFB stacked-LO subharmonic gilbert mixer using SiGe BiCMOS technology

✍ Scribed by T. H. Wu; C. C. Meng; G. W. Huang

Book ID: 102515719
Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 204 KB
Volume: 49
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.22398

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✦ Synopsis

Abstract

A 5.2‐GHz SiGe BiCMOS stacked‐LO‐stage CMFB (common mode feedback) subharmonic mixer is demonstrated in this article. The stacked‐LO‐stage and the active loads are used to improve the 2LO‐RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee‐voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and −78 dB 2LO‐RF isolation. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1214–1216, 2007; Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.22398

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5.2 GHz high isolation SiGe BiCMOS CMFB

5.2 GHz high isolation SiGe BiCMOS CMFB Gilbert mixer

✍ Chinchun Meng; Tzung-Han Wu; Tse-Hung Wu; Guo-Wei Huang 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 187 KB

## Abstract Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port‐to‐port isolations. A 16 dB conversio