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5.2 GHz high isolation SiGe BiCMOS CMFB Gilbert mixer

✍ Scribed by Chinchun Meng; Tzung-Han Wu; Tse-Hung Wu; Guo-Wei Huang

Book ID: 102521443
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 187 KB
Volume: 49
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.22152

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✦ Synopsis

Abstract

Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port‐to‐port isolations. A 16 dB conversion gain, IP~1dB~ = −21 dBm and IIP~3~ = −11 dBm using 0.35 μm SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with −66 dB LO‐IF, −52 dB LO‐RF, and −24 dB RF‐IF isolations. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 450–451, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22152

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High-gain high-isolation CMFB stacked-LO

High-gain high-isolation CMFB stacked-LO subharmonic gilbert mixer using SiGe BiCMOS technology

✍ T. H. Wu; C. C. Meng; G. W. Huang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 204 KB

## Abstract A 5.2‐GHz SiGe BiCMOS stacked‐LO‐stage CMFB (common mode feedback) subharmonic mixer is demonstrated in this article. The stacked‐LO‐stage and the active loads are used to improve the 2LO‐RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transist