The optimum high-frequency Class-F loading conditions are inferred, accounting for the effects of actual output device behavior, and deriving useful charts for an effective design. The important role of the biasing point selection is stressed, demonstrating that it must be different from the Class-B
β¦ LIBER β¦
High gain and high efficiency CMOS power amplifier using multiple design techniques
β Scribed by Kim, K.-J.; Lim, T.; Ahn, K.H.; Yu, J.-W.
- Book ID
- 118138834
- Publisher
- The Institution of Electrical Engineers
- Year
- 2011
- Tongue
- English
- Weight
- 194 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0013-5194
No coin nor oath required. For personal study only.
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## Abstract In this study, a special inverted Doherty topology and uneven power drive methods are proposed to optimize the efficiency and appropriate load modulation. The amplifier is optimized at large power backβoff. The power added efficiency and adjacent channel leakage ratio (ACLR) are 33.1% a