over the cross section of the nanowire which is embedded in vacuum. We solve this equation numerically [13] for a nanowire 30 nm in size (side dimension) illuminated by an incident field of wavelength Ο 400 nm, with the electric-field vector perpendicular to the axis of the nanowire. In Table 1, we
β¦ LIBER β¦
High-Frequency Waveform Generation Using Optoelectronic Switching in Silicon
β Scribed by Proud, J.M.; Norman, S.L.
- Book ID
- 114656940
- Publisher
- IEEE
- Year
- 1978
- Tongue
- English
- Weight
- 319 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0018-9480
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