๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

High frequency properties of resonant tunneling diode

โœ Scribed by H.Y. Sheng; J. Sinkkonen

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
354 KB
Volume
9
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Experimental analysis of resonant tunnel
Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors
โœ Takao Waho; Steffen Koch; Takashi Mizutani ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 160 KB

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /