High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si: Part II: sputtering yield transients, the approach to high-fluence equilibrium

✍ Scribed by Yanwen Zhang; Thomas Winzell; Tonghe Zhang; Ivan A Maximov; Eva-Lena Sarwe; Mariusz Graczyk; Lars Montelius; Harry J Whitlow

• Book ID: 114171580
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 260 KB
• Volume: 159
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(99)00538-8