High-field ODMR investigation of the EL2 defect in semi-insulating GaAs
โ Scribed by I. Tkach; K. Krambrock; H. Overhof; J.-M. Spaeth
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 322 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Photoluminescence and photoacoustic spectroscopy were used to investigate the effect of post-growth annealing carried out to improve the uniformity of Czochralski-grown semi-insulating GaAs. Single-and multi-step, ingot-and waferannealed crystals were studied. It is shown that wafer-annealed crystal
We present here a theoretical and experimental analysis ofphotorefractive two-beam coupling in undoped GaAs as a function of temperature. Three major features are experimentally observed, firstly, a change of sign of the photorefractive beam coupling gain around 150 K, secondly, an enhancement of th