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High-field magnetoresistance at interfaces in manganese perovskites

✍ Scribed by Balcells, Ll.; Fontcuberta, J.; Martínez, B.; Obradors, X.


Book ID
121086123
Publisher
The American Physical Society
Year
1998
Tongue
English
Weight
108 KB
Volume
58
Category
Article
ISSN
1098-0121

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Field-induced resistance switching at me
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Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its