✦ LIBER ✦

Field-induced resistance switching at metal/perovskite manganese oxide interface

✍ Scribed by I. Ohkubo; K. Tsubouchi; T. Harada; H. Kumigashira; K. Itaka; Y. Matsumoto; T. Ohnishi; M. Lippmaa; H. Koinuma; M. Oshima

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 254 KB
Volume: 148
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2007.09.004

No coin nor oath required. For personal study only.

✦ Synopsis

Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films.