The electrical properties of silicon layers formed by imphmtation of oxygen (SIMOX) are controlled by oxygen thermal donors (TDs) which are activated in a high density (lOt-~-lO t~ cm s) during technological processes. It has been found that 650 ยฐC is the annealing temperature at which TDs are activ
โฆ LIBER โฆ
High-field EPR spectroscopy of thermal donors in silicon
โ Scribed by T. Gregorkiewicz; W. Knap; H.H.P.Th. Bekman; L.C. Brunel; C.A.J. Ammerlaan; G. Martinez
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 402 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0921-4526
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