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High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition

✍ Scribed by Binet, F.; Duboz, J. Y.; Off, J.; Scholz, F.


Book ID
118261779
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
130 KB
Volume
60
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES


Femtosecond Exciton Dynamics and the Mot
✍ S. Hess; R.A. Taylor; K. Kyhm; J.F. Ryan; B. Beaumont; P. Gibart πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 174 KB πŸ‘ 2 views

We present resonant femtosecond pumpΒ±probe reflectance measurements of excitons in high quality wurtzite GaN epilayers for a range of lattice temperatures and various pump intensities. From the density dependence of the excitonic bleaching we find that the Mott density is n Mott 2X2 Γ‚ 10 19 cm Γ€3 .