✦ LIBER ✦

High energy electron induced displacement damage in silicon

✍ Scribed by Dale, C.J.; Marshall, P.W.; Burke, E.A.; Summers, G.P.; Wolicki, E.A.

Book ID: 114554581
Publisher: IEEE
Year: 1988
Tongue: English
Weight: 780 KB
Volume: 35
Category: Article
ISSN: 0018-9499
DOI: 10.1109/23.25441

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Pion induced displacement damage in sili

Pion induced displacement damage in silicon devices

✍ M. Huhtinen; P.A. Aarnio 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 187 KB

Proton-induced displacement damage fluct

Proton-induced displacement damage fluctuations in silicon microvolumes

✍ P.W. Marshall; C.J. Dale; E.A. Burke 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 422 KB

High-Energy Radiation Damage in Silicon

High-Energy Radiation Damage in Silicon Transistors

✍ Brucker, G.; Dennehy, W.; Holmes-Siedle, A. 📂 Article 📅 1965 🏛 IEEE 🌐 English ⚖ 890 KB

Radiation damage induced by channeling o

Radiation damage induced by channeling of high energy electrons

✍ Fujimoto, F. ;Fujita, H. 📂 Article 📅 1972 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB

Damage induced in silicon by backscatter

Damage induced in silicon by backscattered electrons

✍ S.D. Dhole; V.N. Bhoraskar 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 265 KB

Electron beam induced damage of silicon

Electron beam induced damage of silicon germanium

✍ D.J. Paul; J.M. Ryan; M. Pepper; A.N. Broers; T.E. Whall; J.M. Fernández; B.A. J 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 304 KB

The damage to modulation-doped pseudomorphic SiGe channels was investigated for a typical 40 keV electron beam lithography resist technique and also a high resolution 300 keV direct write SiO2 patterning technique. Annealing studies on the irradiated samples were also performed. Results show that th