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High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

โœ Scribed by Kaidashev, E. M.; Lorenz, M.; von Wenckstern, H.; Rahm, A.; Semmelhack, H.-C.; Han, K.-H.; Benndorf, G.; Bundesmann, C.; Hochmuth, H.; Grundmann, M.

Book ID
121305723
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
393 KB
Volume
82
Category
Article
ISSN
0003-6951

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Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition
โœ Se-Yun Kim; Sang-Yun Sung; Kwang-Min Jo; Joon-Hyung Lee; Jeong-Joo Kim; S.J. Pea ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 891 KB

We report an investigation of the structural properties of CuCr 0.95 Mg 0.05 O 2 films on c-plane sapphire substrates using pulsed laser deposition. The thin films were grown at different temperatures of 500, 600, and 700 1C with an oxygen partial pressure of 10 mTorr. c-axis oriented epitaxial CuCr