## Abstract This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles
High Efficiency RF and Microwave Solid State Power Amplifiers (Paolo/High Efficiency RF and Microwave Solid State Power Amplifiers) || Front Matter
✍ Scribed by Colantonio, Paolo; Giannini, Franco; Limiti, Ernesto
- Book ID
- 120812504
- Publisher
- John Wiley & Sons, Ltd
- Year
- 2009
- Weight
- 156 KB
- Category
- Article
- ISBN
- 0470513004
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