๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

High-efficiency concurrent dual-band class-F and inverse class-F power amplifier

โœ Scribed by Ding, Y.; Guo, Y.X.; Liu, F.L.


Book ID
126807546
Publisher
The Institution of Electrical Engineers
Year
2011
Tongue
English
Weight
284 KB
Volume
47
Category
Article
ISSN
0013-5194

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A high-efficiency inverse class-F power
โœ Hyoungjong Kim; Gilwong Choi; Jinjoo Choi ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 296 KB

## Abstract The design and fabrication of a highโ€efficiency inverse classโ€F power amplifier using a 10โ€W gallium nitride (GaN) highโ€electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highโ€efficiency operation. The measurement

High-efficiency class-F power amplifier
โœ P. Butterworth; S. Gao; S. F. Ooi; A. Sambell ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 162 KB

## Abstract The design methodology and measured performance of a broadband UHF classโ€F power amplifier is presented and compared to that of a typical narrowband classโ€F design. The realized broadband circuit achieves 65% of powerโ€added efficiency with 21 ยฑ 0.5โ€dBm output power from 575 to 915 MHz,

A high efficiency class-F power amplifie
โœ Sangwon Ko; Wenhsing Wu; Jenshan Lin; Soohwan Jang; Fan Ren; Stephen Pearton; Ro ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 241 KB

## This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point o

High-efficiency transmission-line invers
โœ Andrei Grebennikov ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 748 KB

In this article, a novel load-network solution to implement the transmissionline inverse Class F power amplifiers for base station WCDMA applications is presented. The theoretical analysis is based on an analytical derivation of the optimum load-network parameters to control the second and third har