𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High-efficiency class-A power amplifiers with a dual-bias-control scheme

✍ Scribed by Kyounghoon Yang; Haddad, G.I.; East, J.R.


Book ID
114553476
Publisher
IEEE
Year
1999
Tongue
English
Weight
140 KB
Volume
47
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A high-efficiency class-E power amplifie
✍ Yong-Sub Lee; Yoon-Ha Jeong πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 209 KB

## Abstract This article reports a high efficiency class‐E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for

A high-efficiency inverse class-F power
✍ Hyoungjong Kim; Gilwong Choi; Jinjoo Choi πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 296 KB

## Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement

A high efficiency class-F power amplifie
✍ Sangwon Ko; Wenhsing Wu; Jenshan Lin; Soohwan Jang; Fan Ren; Stephen Pearton; Ro πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 241 KB

## This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point o