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High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

✍ Scribed by Yu-Zung Chiou; Yan-Kuin Su; Shoou-Jinn Chang; Jeng Gong; Yi-Chao Lin; Sen-Hai Liu; Chia-Sheng Chang

Book ID: 117882465
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 377 KB
Volume: 39
Category: Article
ISSN: 0018-9197
DOI: 10.1109/jqe.2003.810262

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## Abstract The growth techniques which have enabled the realization of InGaN‐based multi‐quantum‐well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6‐in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large‐area (111) silicon substr