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High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

✍ Scribed by Jiang, J.; Tsao, S.; O’Sullivan, T.; Zhang, W.; Lim, H.; Sills, T.; Mi, K.; Razeghi, M.; Brown, G. J.; Tidrow, M. Z.


Book ID
120557536
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
442 KB
Volume
84
Category
Article
ISSN
0003-6951

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