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High contrast marks for e-beam direct write made by reactive ion etching

โœ Scribed by M.N. Webster; A.H. Verbruggen; H.F.F. Jos; J. Romijn; P.M.A. Moors; S. Radelaar


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
282 KB
Volume
17
Category
Article
ISSN
0167-9317

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We report on the use of a carbon-rich Pt-based material, obtained by electron and ion beam assisted deposition from metal-organic precursor, as a mask for pattern transfer processes. Thin and narrow mask patterns subjected to oxygen plasma and reactive ion etching (RIE) of silicon in SF 6 were inves