𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High concentration effects of ion implanted boron in silicon

✍ Scribed by H. Ryssel; K. Müller; K. Haberger; R. Henkelmann; F. Jahnel

Publisher
Springer
Year
1980
Tongue
English
Weight
322 KB
Volume
22
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Diffusion of ion-implanted boron impurit
Diffusion of ion-implanted boron impurities into pre-amorphized silicon
✍ Naotsugu Ohno; Tohru Hara; Yasuhiko Matsunaga; Michael I Current; Morio Inoue 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 246 KB

Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 Â 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a

Effect of boron on formation of intersti
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
✍ McCallum, J. C. ;Villis, B. J. ;Johnson, B. C. ;Stavrias, N. ;Burgess, J. E. ;Ch 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐int