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High concentration Bi δ-doping layers on Si(001)

✍ Scribed by J. Falta; O. Mielmann; T. Schmidt; A. Hille; C. Sánchez-Hanke; P. Sonntag; G. Materlik; F. Meyer zu Heringdorf; M. Kammler; M. Horn von Hoegen; M. Copel

Book ID
108418609
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
317 KB
Volume
123-124
Category
Article
ISSN
0169-4332

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Detailed characterization of extremely thin buried Ge films of monolayer thickness (6 layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the