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High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

✍ Scribed by A.SH. Hussein; S.M. Thahab; Z. Hassan; C.W. Chin; H. Abu Hassan; S.S. Ng

Book ID: 116605479
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 638 KB
Volume: 487
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2009.07.185

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## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1–__x__~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1–__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat

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a), T. Tanabe (a), S. Kubo (a), S. Kurai (a), T. Taguchi (a), K. Kainosho (b), and A. Yokohata (b)