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Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD

✍ Scribed by Zhen Zhu; Jin Ma; Lingyi Kong; Caina Luan; Qiaoqun Yu

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
862 KB
Volume
324
Category
Article
ISSN
0022-0248

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## Abstract Nonpolar (11$ \bar 2 $0) __a__ ‐plane GaN thin films were grown on __r__ ‐plane (1$ \bar 1 $02) sapphire substrates by low‐pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the __a__ ‐plane GaN films were investigated by means of polarized Raman sca