is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaA
β¦ LIBER β¦
Heteroepitaxial technologies on Si for high-efficiency solar cells
β Scribed by Masayoshi Umeno; Tetsuo Soga; Krishnan Baskar; Takashi Jimbo
- Book ID
- 108472539
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 502 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0927-0248
No coin nor oath required. For personal study only.
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