Heteroepitaxial growth of InGaP for extremely high-efficiency 2-terminal tandem solar cell with Si
✍ Scribed by Yuji Komatsu; Keiji Hosotani; Takashi Fuyuki; Hiroyuki Matsunami
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 271 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0927-0248
No coin nor oath required. For personal study only.
✦ Synopsis
In]_xGaxP with x ~ 0.7 was successfully grown on a GaP substrate by introducing a compositionally step-graded layer. When the thickness of each step layer surpassed the critical thickness for strain relaxation, strains by lattice mismatch were relaxed and a smooth surface morphology could be obtained at the top layer. Heteroepitaxial growth of GaP on Si was also carried out and effects of thermal cycle annealing (TCA) were examined by X-ray diffraction and RBS. It was shown, that the crystallinity of TC-annealed GaP layer on Si was so excellent that it can be used as a buffer layer of heteroepitaxial growth of In I _xGaxP on Si.