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Heavy ion induced intermixing of metal/SiC interfaces

✍ Scribed by R Nagel; K Weyrich; D.H.H Hofmann; A.G Balogh

Book ID: 118564435
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 177 KB
Volume: 178
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(00)00493-6

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Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiatio