Incubation Effects upon Polycrystalline
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S.-Y. Lien; H.-Y. Mao; B.-R. Wu; R.-H. Horng; D.-Sโ. Wuu
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Article
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2007
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John Wiley and Sons
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English
โ 554 KB
A growth mechanism diagnosis for high-rate, polycrystalline silicon deposition using hot-wire CVD is explored in this article. The effects of various deposition parameters on the Si film growth are investigated by Raman spectroscopy and transmission electron microscopy (TEM) measurements, with speci